English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The coupling between longitudinal optical (LO) phonons and plasmons plays afundamental role in determining the performance of doped semiconductor devices.In this work, we report a comparative investigation into the dependence of thecoupling on temperature and doping in n- and p-type GaAs by using ultrafastoptical phonon spectroscopy. A suppression of coherent oscillations has beenobserved in p-type GaAs at lower temperature, strikingly different from n-typeGaAs and other materials in which coherent oscillations are strongly enhancedby cooling. We attribute this unexpected observation to a cooling-inducedelongation of the depth of the depletion layer which effectively increases thescreening time of surface field due to a slow diffusion of photoexcitedcarriers in p-type GaAs. Such an increase breaks the requirement for thegeneration of coherent LO phonons and, in turn, LO phonon-plasmon coupled modesbecause of their delayed formation in time.

Temperature effect on the coupling between coherent longitudinal phonons and plasmons in n- and p-type GaAs