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In this work, we present a detailed photophysical analysis ofrecently-discovered optically stable, single photon emitters (SPEs) in GalliumNitride (GaN). Temperature-resolved photoluminescence measurements reveal thatthe emission lines at 4 K are three orders of magnitude broader than thetransform-limited widths expected from excited state lifetime measurements. Thebroadening is ascribed to ultra-fast spectral diffusion. Continuing thephotophysics study on several emitters at room temperature (RT), a maximumaverage brightness of ~427 kCounts/s is measured. Furthermore, by determiningthe decay rates of emitters undergoing three-level optical transitions,radiative and non-radiative lifetimes are calculated at RT. Finally,polarization measurements from 14 emitters are used to determine visibility aswell as dipole orientation of defect systems within the GaN crystal. Ourresults underpin some of the fundamental properties of SPE in GaN both atcryogenic and RT, and define the benchmark for future work in GaN-basedsingle-photon technologies.

Photophysics of GaN single photon sources in the visible spectral range