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The quantum anomalous Hall effect (QAHE) has recently been reported to emergein magnetically-doped topological insulators. Although its generalphenomenology is well established, the microscopic origin is far from beingproperly understood and controlled. Here we report on a detailed and systematicinvestigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining densityfunctional theory (DFT) calculations with complementary experimentaltechniques, i.e., scanning tunneling microscopy (STM), resonant photoemission(resPES), and x-ray magnetic circular dichroism (XMCD), we provide a completespectroscopic characterization of both electronic and magnetic properties. Ourresults reveal that the TM dopants not only affect the magnetic state of thehost material, but also significantly alter the electronic structure bygenerating impurity-derived energy bands. Our findings demonstrate theexistence of a delicate interplay between electronic and magnetic properties inTM-doped TIs. In particular, we find that the fate of the topological surfacestates critically depends on the specific character of the TM impurity: whileV- and Fe-doped Sb$_2$Te$_3$ display resonant impurity states in the vicinityof the Dirac point, Cr and Mn impurities leave the energy gap unaffected. Thesingle-ion magnetic anisotropy energy and easy axis, which control the magneticgap opening and its stability, are also found to be strongly TMimpurity-dependent and can vary from in-plane to out-of-plane depending on theimpurity and its distance from the surface. Overall, our results providegeneral guidelines for the realization of a robust QAHE in TM-dopedSb$_2$Te$_3$ in the ferromagnetic state.

Systematics of electronic and magnetic properties in the transition metal doped Sb$_2$Te$_3$ quantum anomalous Hall platform