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Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promisingtechnology for the next generation of data storage devices. The main bottleneckof this technology is the high reversal current density threshold. Thisoutstanding problem of SOT-MRAM is now solved by using a current density ofconstant magnitude and varying flow direction that reduces the reversal currentdensity threshold by a factor of more than the Gilbert damping coefficient. TheEuler-Lagrange equation for the fastest magnetization reversal path and theoptimal current pulse are derived for an arbitrary magnetic cell. Thetheoretical limit of minimal reversal current density and current density for aGHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs arerespectively of the order of $10^5$ A/cm$^2$ and $10^6$ A/cm$^2$ far below$10^7$ A/cm$^2$ and $10^8$ A/cm$^2$ in the conventional strategy. Furthermore,no external magnetic field is needed for a deterministic reversal in the newstrategy.

Breaking the current density threshold in spin-orbit-torque magnetic random access memory