English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Thermal decomposition of silicon carbide is a promising approach for thefabrication of graphene. However, the atomistic growth mechanism of grapheneremains unclear. This paper describes the development of a new charge-transferinteratomic potential. Carbon bonds with a wide variety of characteristics canbe reproduced by the proposed vectorized bond-order term. Large-scale thermaldecomposition simulation enables us to observe the continuous growth process ofthe multi-ring carbon structure. The annealing simulation reveals the atomisticprocess by which the multi-ring carbon structure is transformed to flatgraphene involving only 6-membered rings. Also, it is found that the surfaceatoms of the silicon carbide substrate enhance the homogeneous grapheneformation.

physical review. b./physical review. b

Atomistic mechanism of graphene growth on SiC substrate: Large-scale  molecular dynamics simulation based on a new charge-transfer bond-order type  potential