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The presence of the quantum anomalous Hall effect in a V-doped topological insulator (TI) has not yet been understood from band-structure studies. Here, we demonstrate the importance of including the correlation effect in density-functional-theory (DFT) calculations, in the format as simple as the Hubbard $U$, for the determination of the topological properties of these materials. Our results show that the correlation effect turns a V-doped TI thin film into a Mott insulator and facilitates it entering the quantum anomalous Hall phase. Even the ferromagnetic ordering is also strongly affected by the inclusion of the $U$ term. This work satisfactorily explains recent experimental observations and highlights the essentialness of having the Coulomb correlation effect in DFT studies of magnetic TIs.

Importance of Coulomb correlation on the quantum anomalous Hall effect in V-doped topological insulators