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Topological crystalline insulator (TCI) is a recently-discovered topologicalphase of matter. It possesses multiple Dirac surface states, which areprotected by the crystal symmetry. This is in contrast to the time reversalsymmetry that is operative in the well-known topological insulators. In thepresence of a Zeeman field and/or strain, the multiple Dirac surface states aregapped. The high-Chern-number quantum anomalous Hall (QAH) state is predictedto emerge if the chemical potential resides in all the Zeeman gaps. Here, weuse molecular beam epitaxy to grow 12 double layer (DL) pure and Cr-doped SnTe(111) thin film on heat-treated SrTiO3 (111) substrate using a quintuple layerof insulating (Bi0.2Sb0.8)2Te3 topological insulator as a buffer film. The Halltraces of Cr-doped SnTe film at low temperatures display square hysteresisloops indicating long-range ferromagnetic order with perpendicular anisotropy.The Curie temperature of the 12DL Sn0.9Cr0.1Te film is ~ 110 K. Due to thechemical potential crossing the bulk valence bands, the anomalous Hallresistance of 12DL Sn0.9Cr0.1Te film is substantially lower than the predictedquantized value (~1/4 h/e2). It is possible that with systematic tuning thechemical potential via chemical doping and electrical gating, thehigh-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thinfilm.

Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films