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We present systematic temperature-dependent resistance noise measurements ona series of ferromagnetic Ga$_{1-x}$Mn$_{x}$As epitaxial thin films covering alarge parameter space in terms of the Mn content $x$ and other variationsregarding sample fabrication. We infer that the electronic noise is dominatedby switching processes related to impurities in the entire temperature range.While metallic compounds with $x>2$ % do not exhibit any significant change inthe low-frequency resistance noise around the Curie temperature $T_\mathrm{C}$,we find indications for an electronic phase separation in films with $x<2$ % inthe vicinity of $T_\mathrm{C}$, manifesting itself in a maximum in the noisepower spectral density. These results are compared with noise measurements onan insulating Ga$_{1-x}$Mn$_{x}$P reference sample, for which the evidence foran electronic phase separation is even stronger and a possible percolation ofbound magnetic polarons is discussed. Another aspect addressed in this work isthe effect of ion-irradiation induced disorder on the electronic properties ofGa$_{1-x}$Mn$_{x}$As films and, in particular, whether any electronicinhomogeneities can be observed in this case. Finally, we put our findings intothe context of the ongoing debate on the electronic structure and thedevelopment of spontaneous magnetization in these materials.

physical review. b./physical review. b

Investigation of a possible electronic phase separation in the magnetic  semiconductors Ga$_{1-x}$Mn$_{x}$As and Ga$_{1-x}$Mn$_{x}$P by means of  fluctuation spectroscopy