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Magnetic proximity effect of a topological insulator in contact with aferromagnet is reported in thin film bilayers of 15 nm thick $BiSbTe_3$ oneither 15 or 40 nm thick $SrRuO_3$ on (100) $SrTiO_3$ wafers. Magneto transportresults of the bilayers were compared with those of reference films of 15 nm$BiSbTe_3$ and 15 or 40 nm $SrRuO_3$. Comparison of the temperature coefficientof resistance [(1/R)$\times$dR/dT which is qualitatively proportional to themagnetization] of the bilayer and reference ferromagnetic film normalized above$T_c$, shows a clear suppression in the bilayer by about 50% just below $T_c$,indicating a weaker proximity magnetization in the bilayer. Resistancehysteresis loops versus field at 1.85$\pm$0.05 K in the bilayer and referencefilms show a clear magnetic proximity effect, where the peak resistance of thebilayer at the coercive field shifts to lower fields by $\sim$30% compared to ahypothetical bilayer of two resistors connected in parallel with no interactionbetween the layers. Narrowing of the coercive peaks of the bilayers as comparedto those of the reference ferromagnetic films by 25-35% was also observed,which represents another signature of the magnetic proximity effect.

Magnetic proximity effect of a topological insulator and a ferromagnet in thin film bilayers of $BiSbTe_3$ and $SrRuO_3$