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We have theoretically investigated the influence of interface roughnessscattering on the low temperature mobility of electrons in quantum wires whenelectrons fill one or many subbands. We find the Drude conductance of the wirewith length $\mathcal{L}$ first increases with increasing linear concentrationof electrons $\eta$ and then decreases at larger concentrations. For smallradius $R$ of the wire with length $\mathcal{L}$ the peak of the conductance$G_{max}$ is below $e^2/h$ so that electrons are localized. The height of thispeak grows as a large power of $R$, so that at large $R$ the conductance$G_{max}$ exceeds $e^2/h$ and a window of concentrations with delocalizedstates (which we call the metallic window) opens around the peak. Thus, wepredict an insulator-metal-insulator transition with increasing concentrationfor large enough $R$. Furthermore, we show that the metallic domain can besub-divided into three smaller domains: 1) single-subband ballistic conductor,2) many-subband ballistic conductor 3) diffusive metal, and use our results toestimate the conductance in these domains. Finally we estimate the criticalvalue of $R_c(\mathcal{L})$ at which the metallic window opens for a givenlength $\mathcal{L}$ and find it to be in reasonable agreement with experiment.

Roughness scattering induced insulator-metal-insulator transition in a quantum wire