English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

International audienceOptical properties of the quasi-two-dimensional single-component molecular Mott insulator [Au(Et-thiazdt)$_2$] (Et-thiazdt = N-ethyl-1,3-thiazoline-2-thione-4,5-dithiolate) have been investigated under pressure at room temperature. At 1.5 GPa, [Au(Et-thiazdt)$_2$] undergoes an insulator to metal transition (IMT). Optical conductivity spectra exhibit a clear Drude peak at high pressure. In addition, we observed a clear anisotropy of pressure-induced modifications of the electronic structure. With increasing pressure, along the molecule stacks, a strong increase of the spectral weight below 1 eV is observed, while in the transverse direction, it remains barely constant with a redistribution from midinfrared to low energy. Besides the increase of the singly occupied molecular orbital (SOMO) bandwidth, calculations show that the SOMO-1 bands cross the Fermi level at the transition. Moreover, we have calculated the optical conductivity as a function of pressure to provide a picture of the compound physics under 1 eV. Our results indicate that the pressure-induced IMT is simultaneously due to a bandwidth and a band-filling phenomenon that imply both Mott physics and uncorrelated charge carriers

physical review. b./physical review. b

Interplay between bandwidth-controlled and filling-controlled pressure-induced Mott insulator to metal transition in the molecular compound [Au(Et-thiazdt) <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub><mml:mrow><mml:mo>]</mml:mo></mml:mrow></mml:mrow></mml:math>

Interplay between bandwidth-controlled and filling-controlled pressure-induced Mott insulator to metal transition in the molecular compound [Au(Et-thiazdt) 2]