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In this report, we present the magnetotransport and magnetization propertiesof LaSbTe single crystals. Magnetic field-induced turn-on behavior andlow-temperature resistivity plateau have been observed. By adopting bothmetal-semiconductor crossover and Kohler scaling analysis, we have discussedthe possible origin of the temperature and magnetic field dependence ofresistivity. At 5 K and 9 T, a large, non-saturating transversemagnetoresistance (MR) $\sim$ 5$\times$10$^{3}$ \% has been obtained. The MRshows considerable anisotropy, when the magnetic field is applied alongdifferent crystallographic directions. The non-linear field dependence of theHall resistivity confirms the presence of two types of charge carriers. Fromthe semiclassical two-band fitting of Hall conductivity and longitudinalconductivity, very high carrier mobilities and almost equal electron and holedensities have been deduced, which result in large MR. The Fermi surfaceproperties have been analyzed from de Haas-van Alphen oscillation. From themagnetization measurement, the signature of non-trivial surface state has beendetected, which confirms that LaSbTe is a topological insulator, consistentwith the earlier first-principles calculations.

Magnetotransport properties and evidence of topological insulating state in LaSbTe