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Low-resistance ohmic contacts are a challenge for electronic devices based ontwo-dimensional materials. We show that an atomically precise junction betweena two-dimensional semiconductor and a metallic contact can lead to asemiconductor-to-metal transition in the two-dimensional material--a findingwhich points the way to a possible method of achieving low-resistancejunctions. Specifically, single-layer WS$_2$ undergoes a semiconductor-to-metaltransition when epitaxially grown on Ag(111), while it remains a direct bandgap semiconductor on Au(111). The metallicity of the single layer on Ag(111) isestablished by lineshape analysis of core level photoemission spectra.Angle-resolved photoemission spectroscopy locates the metallic states near theQ point of the WS$_2$ Brillouin zone. Density functional theory calculationsshow that the metallic states arise from hybridization between Ag bulk bandsand the local conduction band minimum of WS$_2$ near the Q point.

Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$