English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We demonstrated that the spin injection/extraction efficiency is enhanced byan ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions.In diode-type vertical three-terminal devices fabricated on a Si substrate, weobserved the narrower three-terminal Hanle (N-3TH) signals indicating true spininjection into Si, and estimated the spin polarization in Si to be 16% when thethickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal wasobserved without Mg insertion. This means that the spin injection/extractionefficiency is enhanced by suppressing the formation of a magnetically-deadlayer at the Fe/MgO interface. We have also observed clear spin transportsignals, such as non-local Hanle signals and spin-valve signals, in a lateralfour-terminal device with the same Fe/Mg/MgO/n+-Si tunnel junctions fabricatedon a Si-on-insulator substrate. It was found that both the intensity andlinewidth of the spin signals are affected by the geometrical effects (devicegeometry and size). We have derived analytical functions taking into accountthe device structures, including channel thickness and electrode size, andestimated important parameters; spin lifetime and spin polarizations. Ouranalytical functions well explain the experimental results. Our study shows theimportance of suppressing a magnetically-dead layer, and provides a unifiedunderstanding of spin injection/detection signals in different devicegeometries.

physical review. b./physical review. b

Spin injection into Si in three-terminal vertical and four-terminal  lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg  insertion layer