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A trigonal phase existing only as small patches on chemically exfoliated fewlayer, thermodynamically stable 1H phase of MoS2 is believed to influencecritically properties of MoS2 based devices. This phase has been most oftenattributed to the metallic 1T phase. We investigate the electronic structure ofchemically exfoliated MoS2 few layered systems using spatially resolved (lesserthan 120 nm resolution) photoemission spectroscopy and Raman spectroscopy inconjunction with state-of-the-art electronic structure calculations. On thebasis of these results, we establish that the ground state of this phase is asmall gap (~90 meV) semiconductor in contrast to most claims in the literature;we also identify the specific trigonal (1T') structure it has among manysuggested ones.

Chemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase