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Using highly controlled coverages of graphene on SiC(0001), we have studiedthe structure of the first graphene layer that grows on the SiC interface. Thislayer, known as the buffer layer, is semiconducting. Using x-ray reflectivityand x-ray standing waves analysis we have performed a comparative study of thebuffer layer structure with and without an additional monolayer graphene layerabove it. We show that no more than 26\% of the buffer carbon is covalentlybonded to Si in the SiC interface. We also show that the top SiC bilayer is Sidepleted and is the likely the cause of the incommensuration previouslyobserved in this system. When a monolayer graphene layer forms above thebuffer, the buffer layer becomes less corrugated with signs of a change in thebonding geometry with the SiC interface. At the same time, the entire SiCinterface becomes more disordered, presumably due to entropy associated withthe higher growth temperature.

The structure and evolution of semiconducting buffer graphene grown on SiC(0001)