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The production of spin-polarized currents in pristine carbon nanotubes withRashba spin-orbit interaction has been shown to be very sensitive to thesymmetry of the tubes and the geometry of the setup. Here we analyze the roleof defects on the spin quantum conductances of metallic carbon nanotubes due toan external electric field. We show that localized defects, such as adsorbedhydrogen atoms or pentagon-heptagon pairs, increase the Rashba spin-polarizedcurrent. Moreover, this enhancement takes place for energies closer to theFermi energy as compared to the response of pristine tubes. Such increment canbe even larger when several equally spaced defects are introduced into thesystem. We explore different arrangements of defects, showing that for certaingeometries there are flips of the spin-polarized current and even transportsuppression. Our results indicate that spin valve devices at the nanoscale maybe achieved via defect engineering in carbon nanotubes.

Defect-enhanced Rashba spin-polarized currents in carbon nanotubes