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Inverted HgTe/CdTe quantum wells have been used as a platform for therealization of 2D topological insulators, bulk insulator materials withspin-helical metallic edges states protected by time-reversal symmetry. Thiswork investigates the spectrum and the charge transport in HgTe/CdTe quantumwell junctions both in the topological regime and in the absence oftime-reversal symmetry. We model the system using the BHZ effective Hamiltonianand compute the transport properties using recursive Green's functions with afinite differences' method. Specifically, we have studied the material'sspatially-resolved conductance in a set-up with a gated central region, formingmonopolar (n-n$^{\prime}$-n) and heteropolar (n-p-n, n-TI-n) double junctions,which have been recently realized in experiments. We find regimes in which theedge states carry spin-polarized currents in the central region even in thepresence of a small magnetic field, which breaks TRS. More interestingly, theconductance displays spin-dependent, Fabry-Per\'ot-like oscillations as afunction of the central gate voltage producing tunable, fully spin-polarizedcurrents through the device.

Tunable spin-polarized edge transport in inverted quantum-well junctions