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A concept of quasiplanar one-way transparent terahertz absorbers made of linear isotropic materials is presented. The resulting structure consists of a homogeneous absorbing layer of polar dielectric, GaAs, a dispersion-free substrate, and an ultrathin frequency-selective reflector. It is demonstrated that perfect absorption can be obtained for forward illumination, along with total reflection at backward illumination and transparency windows in the adjacent bands. The design is particularized for the polaritonic gap range where permittivity of GaAs varies in a wide range and includes epsilon-near-zero and transparency regimes. The underlying physics can be explained with the aid of a unified equivalent-circuit (EC) analytical model. Perfect matching of input impedance in forward operation and, simultaneously, strong mismatch in the backward case are the universal criteria of one-way absorption. It is shown that perfect one-way absorption can be achieved at rather arbitrary permittivity values, provided these criteria are fulfilled. The EC results are in good agreement with full-wave simulations in a wide range of material and geometrical parameters. The resulting one-way absorbers are very compact and geometrically simple, and enable transparency in the neighboring frequency ranges and, hence, multifunctionality that utilizes both absorption- and transmission-related regimes.This  work  is  supported  by  the  Spanish  Ministerio  deEconomía  y  Competitividad  (MINECO)  (TEC2014-51902-C2-2-R).  P.R.U.  is  sponsored  by  the  Public  University  ofNavarra  via  a  predoctoral  scholarship,  and  A.E.S.  is  sup-ported  by  the  National  Science  Center  of  Poland  (NCN)(MetaSel DEC-2015/17/B/ST3/00118). We are very thankfulto  Prof.  S.  Nojima,  YCU  (Yokohama,  Japan),  for  valuablediscussions

One-way quasiplanar terahertz absorbers using nonstructured polar dielectric layers