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We study how the shape of the spinwave resonance lines in rf-voltage inducedFMR can be used to extract the spinwave density of states and the dampingwithin the precessing layer in nanoscale tunnel junctions that possessperpendicular anisotropy. We work with a field applied along the easy axis topreserve the uniaxial symmetry of the system. We describe the set-up to studythe susceptibility contributions of the spin waves in the field-frequencyspace. We then identify the maximum device size above which the spinwaves canno longer be studied in isolation as the linewidths of their responses makethem overlap. The rf-voltage induced signal is the sum of two voltages thathave comparable magnitudes: a first voltage that originates from the transversesusceptibility and rectification by magnetoresistance and a second voltage thatarises from the non-linear longitudinal susceptibility and the resultanttime-averaged change of the micromagnetic configuration. The transverse andlongitudinal susceptibility signals have different dc bias dependences suchthat they can be separated by measuring how the device rectifies the rf voltageat different dc bias voltages. The transverse and longitudinal susceptibilitysignals have different lineshapes; their joint studies can yield the Gilbertdamping of the free layer of the device with a degree of confidence thatcompares well with standard FMR. Our method is illustrated on FeCoB-based freelayers in which the individual spin-waves can be sufficiently resolved only fordisk diameters below 200 nm. The resonance line shapes on devices with 90 nmdiameters are consistent with a Gilbert damping of 0.011. This damping of 0.011exceeds the value of 0.008 measured on the unpatterned films, which indicatesthat device-level measurements are needed for a correct evaluation ofdissipation.

Using rf voltage induced ferromagnetic resonance to study the spin-wave density of states and the Gilbert damping in perpendicularly magnetized disks