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The negatively charged nitrogen-vacancy (NV-) center in diamond is apromising candidate for many quantum applications. Here, we examine thesplitting and broadening of the center's infrared (IR) zero-phonon line (ZPL).We develop a model for these effects that accounts for the strain induced byphoto-dependent microscopic distributions of defects. We apply this model tointerpret observed variations of the IR ZPL shape with temperature andphotoexcitation conditions. We identify an anomalous temperature dependentbroadening mechanism and that defects other than the substitutional nitrogencenter significantly contribute to strain broadening. The former conclusionsuggests the presence of a strong Jahn-Teller effect in the center's singletlevels and the latter indicates that major sources of broadening are yet to beidentified. These conclusions have important implications for the understandingof the center and the engineering of diamond quantum devices. Finally, wepropose that the IR ZPL can be used as a sensitive spectroscopic tool forprobing microscopic strain fields and performing defect tomography.

Strain broadening of the 1042-nm zero-phonon line of the NV- center in diamond: a promising spectroscopic tool for defect tomography