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We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001)by using molecular beam epitaxy (MBE), and characterize its electronicstructure with scanning tunneling microscopy / spectroscopy (STM/STS). Wedemonstrate the existence of topological edge states at the periphery ofsingle-layer WTe2 islands. Surprisingly, we also find a band gap in the bulkand the semiconducting behaviors of the single-layer WTe2 at low temperature,which is likely resulted from an incommensurate charge density wave (CDW)transition. The realization of two-dimensional topological insulators (2D TIs)in single-layer transition metal dichalcogenide (TMD) thus provides a promisingplatform for further exploration of the 2D TIs' physics and relatedapplications.

Direct Visualization of 2D Topological Insulator in Single-layer 1T'-WTe2