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We study the electronic properties of GaAs nanowires composed of both thezincblende and wurtzite modifications using a ten-band k.p model. In thewurtzite phase, two energetically close conduction bands are of importance forthe confinement and the energy levels of the electron ground state. These bandsform two intersecting potential landscapes for electrons in zincblende/wurtzitenanostructures. The energy difference between the two bands depends sensitivelyon strain, such that even small strains can reverse the energy ordering of thetwo bands. This reversal may already be induced by the non-negligible latticemismatch between the two crystal phases in polytype GaAs nanostructures, a factthat was ignored in previous studies of these structures. We present asystematic study of the influence of intrinsic and extrinsic strain on theelectron ground state for both purely zincblende and wurtzite nanowires as wellas for polytype superlattices. The coexistence of the two conduction bands andtheir opposite strain dependence results in complex electronic and opticalproperties of GaAs polytype nanostructures. In particular, both the energy andthe polarization of the lowest intersubband transition depends on the relativefraction of the two crystal phases in the nanowire.

Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character