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CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagneticsemiconductor that is promising for spintronic device applications. UnlikeCrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3exhibits a smaller van der Waals gap and larger cleavage energy, which couldlead to a transition of magnetic mechanism from 2D to 3D. To confirm thisspeculation, we investigate the critical behavior CrGeTe3 around thesecond-order paramagnetic-ferromagnetic phase transition. We obtain thecritical exponents estimated by several common experimental techniquesincluding the modified Arrott plot, Kouvel-Fisher method and critical isothermanalysis, which show that the magnetism of CrGeTe3 follows the tricriticalmean-field model with the critical exponents \b{eta}, {\gamma}, and {\delta} of0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. Wetherefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3should locate near a tricritical point. Our experiment provides a directdemonstration of the applicability of the tricritical mean-field model to a 2Dferromagnetic semiconductor.

Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3