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We report a high temperature (T = 0.3K) indicator of the excitation gap$\Delta_{5/2}$ at the filling factor $ \nu=5/2$ fractional quantum Hall statein ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lackof correlation between mobility $\mu$ and $\Delta_{5/2}$ has been wellestablished in previous experiments, we define, analyze and discuss the utilityof a different metric $\rho_{5/2}$, the resistivity at $\nu=5/2$, as a hightemperature predictor of $\Delta_{5/2}$. This high-field resistivity reflectsthe scattering rate of composite fermions. Good correlation between$\rho_{5/2}$ and $\Delta_{5/2}$ is observed in both a density tunable deviceand in a series of identically structured wafers with similar density butvastly different mobility. This correlation can be explained by the fact thatboth $\rho_{5/2}$ and $\Delta_{5/2}$ are sensitive to long-range disorder fromremote impurities, while $\mu$ is sensitive primarily to disorder localizednear the quantum well.

High temperature resistivity measured at {\nu} = 5/2 as a predictor of 2DEG quality in the N=1 Landau level