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The current-voltage characteristics of a new range of devices built aroundWeyl semimetals has been predicted using the Landauer formalism. The potentialstep and barrier have been reconsidered for a three-dimensional Weylsemimetals, with analogies to the two-dimensional material graphene and tooptics. With the use of our results we also show how a Veselago lens can bemade from Weyl semimetals, e.g. from NbAs and NbP. Such a lens may have manypractical applications and can be used as a probing tip in a scanning tunnelingmicroscope (STM). The ballistic character of Weyl fermion transport inside thesemimetal tip, combined with the ideal focusing of the Weyl fermions (byVeselago lens) on the surface of the tip may create a very narrow electron beamfrom the tip to the surface of the studied material. With a Weyl semimetalprobing tip the resolution of the present STMs can be improved significantly,and one may image not only individual atoms but also individual electronorbitals or chemical bonding and therewith to resolve the long-term issue ofchemical and hydrogen bond formation. We show that applying a pressure to theWeyl semimental, having no centre of spacial inversion one may model matter atextreme conditions such as those arising in the vicinity of a black hole. Asthe materials Cd3As2 and Na3Bi show an asymmetry in their Dirac cones, ascaling factor was used to model this asymmetry. The scaling factor createdadditional regions of no propagation and condensed the appearance ofresonances. We argue that under an external pressure there may arise atopological phase transition in Weyl semimetals, where the electron transportchanges character and becomes anisotropic. There a hyperbolic Dirac phasesoccurs where there is a strong light absorption and photo-current generation.

Current-Voltage Characteristics of Weyl Semimetal Semiconducting Devices, Veselago Lenses and Hyperbolic Dirac Phase