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Electronic transport properties of the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Snsurface formed on low doped Si substrates are studied using two-probeconductivity measurements and tunnelling spectroscopy. We demonstrate that theground state corresponds to Mott-Hubbard insulator with a band gap $2\Delta =70$meV, which vanishes quickly upon temperature increase. The temperaturedependence of the surface conductivity above $T > 50$K corresponds to theEfros-Shklovskii hopping conduction law. The energy gap at the Fermi levelobserved in tunnelling spectroscopy measurements at higher temperatures couldbe described in terms of dynamic Coulomb blockade approximation. The obtainedlocalization length of electron is $\xi = 7$\AA.

Electronic correlation effects and Coulomb gap in the Si(111)-$(\sqrt{3}\times\sqrt{3})$-Sn surface