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With infrared (IR) ellipsometry and DC resistance measurements weinvestigated the photo-doping at the (001) and (110) surfaces of SrTiO$_3$(STO) single crystals and at the corresponding interfaces ofLaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures. In the bare STO crystals wefind that the photo-generated charge carriers, which accumulate near the (001)surface, have a similar depth profile and sheet carrier concentration as theconfined electrons that were previously observed in LAO/STO (001)heterostructures. A large fraction of these photo-generated charge carrierspersist at low temperature at the STO (001) surface even after the UV light hasbeen switched off again. These persistent charge carriers seem to originatefrom oxygen vacancies that are trapped at the structural domain boundarieswhich develop below the so-called antiferrodistortive transition at T* = 105 K.This is most evident from a corresponding photo-doping study of the DCtransport in STO (110) crystals for which the concentration of these domainboundaries can be modified by applying a weak uniaxial stress. The oxygenvacancies and their trapping by defects are also the source of the electronsthat are confined to the interface of LAO/STO (110) heterostructures whichlikely do not have a polar discontinuity as in LAO/STO (001). In the former,the trapping and clustering of the oxygen vacancies also has a strong influenceon the anisotropy of the charge carrier mobility. We show that this anisotropycan be readily varied and even inverted by various means, such as a gentlethermal treatment, UV irradiation, or even a weak uniaxial stress. Ourexperiments suggest that extended defects, which develop over long time periods(of weeks to months), can strongly influence the response of the confinedcharge carriers at the LAO/STO (110) interface.

physical review. b./physical review. b

Infrared ellipsometry study of the photo-generated charge carriers at  the (001) and (110) surfaces of SrTiO$_3$ crystals and the interface of  corresponding LaAlO$_3$/SrTiO$_3$ heterostructures