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Controlling material properties by modulating the crystalline structure hasbeen attempted using various techniques, e.g., hydrostatic pressure, chemicalpressure, and epitaxy. These techniques succeed to improve properties andachieve desired functionalities by changing the unit cell in all dimensions. Inorder to obtain a more detailed understanding on the relation between thecrystal lattice and material properties, it is desirable to investigate theinfluence of a smaller number of parameters. Here, we utilize the combinationof chemical pressure and epitaxy to modify a single lattice parameter of themultiferroic orthorhombic RMnO$_3$ (R = rare-earth, o-RMnO$_3$) system. Bygrowing a series of o-RMnO$_3$ (R = Gd - Lu) films coherently on (010)-orientedYAlO$_3$ substrates, the influence of chemical pressure is reflected only alongthe $b$-axis. Thus, a series of o-RMnO$_3$ with $a$ ~ 5.18 {\AA}, 5.77 {\AA} <$b$ < 5.98 {\AA}, and $c$ ~ 7.37 {\AA} were obtained. Raman spectra analysisreveals that the change of the $b$-axis parameter induces a shift of the oxygenin the nominally "fixed" $ca$-plane. Their ferroelectric ground state isindependent on the $b$-axis parameter showing polarization of ~ 1 $\mu$Ccm$^{-2}$ along the $a$-axis for the above-mentioned range, except for $b$ ~5.94 {\AA} which corresponds to TbMnO$_3$ showing ~ 2 $\mu$C cm$^{-2}$. Thisresult implies that multiferroic order of o-RMnO$_3$ is almost robust againstthe $b$-axis parameter provided that the dimension of the $ca$-plane is fixedto 7.37 {\AA} $\times$ 5.18 {\AA}.

Single-axis dependent structural and multiferroic properties of orthorhombic RMnO$_3$ (R = Gd - Lu)