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The high room temperature mobility and the electron effective mass inBaSnO$_3$ are investigated in depth by evaluation of the free carrierabsorption observed in infrared spectra for epitaxial films with free electronconcentrations from $8.3 \times 10^{18}$ to $7.3 \times 10^{20}$~cm$^{-3}$.Both the optical band gap widening by conduction band filling and the carrierscattering mechanisms in the low and high doping regimes are consistentlydescribed employing parameters solely based on the intrinsic physicalproperties of BaSnO$_3$. The results explain the current mobility limits inepitaxial films and demonstrate the potential of BaSnO$_3$ to outperformestablished wide band gap semiconductors also in the moderate doping regime.

Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO$_3$