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We theoretically study the current-induced spin torque in antiferromagnetictunnel junctions, composed of two semi-infinite antiferromagnetic layersseparated by a tunnel barrier, in both clean and disordered regimes. We findthat the torque enabling the electrical manipulation of the N\'eelantiferromagnetic order parameter is out of plane $\sim {\bf n}\times{\bf p}$,while the torque competing with the antiferromagnetic exchange is in-plane$\sim {\bf n}\times({\bf p}\times{\bf n})$. Here, ${\bf { p}}$ and ${\bf { n}}$are the N\'eel order parameter direction of the reference and free layers,respectively. Their bias dependence shows similar behavior as in ferromagnetictunnel junctions, the in-plane torque being mostly linear in bias while theout-of-plane torque is quadratic. Most importantly, we find that the spintransfer torque in antiferromagnetic tunnel junctions is much more robustagainst disorder than in antiferromagnetic metallic spin-valves due to thetunneling nature of spin transport.

Robust spin transfer torque in antiferromagnetic tunnel junctions