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The quest for high-efficiency heat-to-electricity conversion has been one ofthe major driving forces towards renewable energy production for the future.Efficient thermoelectric devices require high voltage generation from atemperature gradient and a large electrical conductivity, while maintaining alow thermal conductivity. For a given thermal conductivity and temperature, thethermoelectric powerfactor is determined by the electronic structure of thematerial. Low dimensionality (1D and 2D) opens new routes to high powerfactordue to the unique density of states (DOS) of confined electrons and holes. 2Dtransition metal dichalcogenide (TMDC) semiconductors represent a new class ofthermoelectric materials not only due to such confinement effects, butespecially due to their large effective masses and valley degeneracies. Here wereport a powerfactor of $MoS_2$ as large as $8.5 mWm^{-1}K^{-2}$ at roomtemperature, which is amongst the highest measured in traditional, gappedthermoelectric materials. To obtain these high powerfactors, we performthermoelectric measurements on few-layer $MoS_2$ in the metallic regime, whichallows us to access the 2D DOS near the conduction band edge and exploit theeffect of 2D confinement on electron scattering rates, which result in a largeSeebeck coefficient. The demonstrated high, electronically modulatedpowerfactor in 2D TMDCs holds promise for efficient thermoelectric energyconversion.

High Thermoelectric Powerfactor in Single and Few-Layer MoS$_2$