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Silicides are used extensively in nano- and microdevices due to their lowelectrical resistivity, low contact resistance to silicon, and their processcompatibility. In this work, the thermal interface conductance of TiSi$_2$,CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance.Exploiting the fact that most silicides formed on Si(111) substrates growepitaxially, while most silicides on Si(100) do not, we study the effect ofepitaxy, and show that for a wide variety of interfaces there is no differencein the thermal interface conductance of epitaxial and non-epitaxialsilicide/silicon interfaces. The effect of substrate carrier concentration isalso investigated over a wide range of p- and n-type doping, and is found to beindependent of carrier concentration, regardless of whether the interface isepitaxial and regardless of silicide type. In the case of epitaxial CoSi$_2$, acomparison of temperature dependant experimental data is made with two detailedcomputational models using (1) full-dispersion diffuse mismatch modeling (DMM)including the effect of near-interfacial strain and (2) an atomistic Green'function (AGF) approach that integrates near-interface changes in theinteratomic force constants obtained through density functional perturbationtheory. At temperatures above 100K, the AGF approach greatly underpredicts theCoSi$_2$ data, while the DMM prediction matches the data well. Thefull-dispersion DMM is also found to closely predict the experimentallyobserved temperature-dependent interface conductance for epitaxial NiSi/Si andnon-epitaxial TiSi$_2$/Si interfaces. In the case of epitaxial PtSi/Siinterfaces, full dispersion DMM significantly overpredicts the experimentaldata.

Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces