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Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relativelyhigh temperature of 210 K, and hence is a promising material for spintronicapplications compatible with Si technology. We have studied its electronicstructure by soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES)measurements in order to elucidate the mechanism of the ferromagnetism. Weobserved finite Fe 3$d$ components in the states at the Fermi level ($E_{F}$)in a wide region in momentum space and $E_{F}$ was located above thevalence-band maximum (VBM). First-principles supercell calculation alsosuggested that the $E_{F}$ is located above the VBM, within the narrowspin-down $d$($e$) band and within the spin-up impurity band of the deepacceptor-level origin derived from the strong $p$-$d$($t_{2}$) hybridization.We conclude that the narrow $d$($e$) band is responsible for the ferromagneticcoupling between Fe atoms while the acceptor-level-originated band isresponsible for the transport properties of Ge:Fe.

Electronic Structure of the Ferromagnetic Semiconductor Fe-doped Ge Revealed by Soft X-ray Angle-Resolved Photoemission Spectroscopy