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We consider a minimal model to investigate the metal-insulator transition inVO$_2$. We adopt a Hubbard model with two orbital per unit cell, which capturesthe competition between Mott and singlet-dimer localization. We solve the modelwithin Dynamical Mean Field Theory, characterizing in detail themetal-insulator transition and finding new features in the electronic states.We compare our results with available experimental data obtaining goodagreement in the relevant model parameter range. Crucially, we can account forpuzzling optical conductivity data obtained within the hysteresis region, whichwe associate to a novel metallic state characterized by a split heavyquasiparticle band. Our results show that the thermal-driven insulator-to-metaltransition in VO$_2$ is compatible with a Mott electronic mechanism, providingfresh insight to a long standing "chicken-and-egg" debate and calling forfurther research of "Mottronics" applications of this system.

Resolving the VO$_2$ controversy: Mott mechanism dominates the insulator-to-metal transition