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We develop a novel field effect transistor (FET) device using solid ionconductor (SIC) as a gate dielectric, and we can tune the carrier density ofFeSe by driving lithium ions in and out of the FeSe thin flakes, andconsequently control the material properties and its phase transitions. Adome-shaped superconducting phase diagram was mapped out with increasing Licontent, with $T_c$ $\sim$ 46.6 K for the optimal doping, and an insulatingphase was reached at the extremely overdoped regime. Our study suggests that,using solid ion conductor as a gate dielectric, the SIC-FET device can achievemuch higher carrier doping in the bulk, and suit many surface sensitiveexperimental probes, and can stabilize novel structural phases that areinaccessible in ordinary conditions.

Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric