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We study theoretically the current-voltage characteristics (IVCs) of theJosephson field effect transistor - a ballistic SNINS junction withsuperconducting (S) electrodes confining a planar normal metal region (N),which is controlled by the gate induced potential barrier (I). The calculationswere performed using the computation technique developed earlier for longsingle-channel junctions in the coherent multiple Andreev reflections (MAR)regime. We find significant difference of the subgap current structure in thesejunctions compared to the subharmonic gap structure in tunnel junctions andatomic-size point contacts. For long junctions, whose length significantlyexceeds the coherence length, the IVC exhibits current peaks at multiples(harmonics) of the difference $\delta_m$ between the static Andreev levels,$eV_n = n\delta_m$. Moreover, the averaged IVC follows the power rather thanexponential behavior, and has a universal scaling with the junctiontransparency. This result is qualitatively understood using an analyticalapproach based on the concept of resonant MAR trajectories. In shorterjunctions whose length is comparable to the coherence length, the IVC has anexponential form common for point contacts, however the current structuresappear at the subharmonics of the Andreev interlevel distance, $eV_n =\delta_m/n$ rather than the gap subharmonics $2\Delta/n$.

Resonant subgap current transport in Josephson field effect transistor