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In the present work, a theoretical study of electron-phonon (electron-ion)coupling rates in semiconductors driven out of equilibrium is performed.Transient change of optical coefficients reflects the band gap shrinkage incovalently bonded materials, and thus, the heating of atomic lattice. Utilizingthis dependence, we test various models of electron-ion coupling. Thesimulation technique is based on tight-binding molecular dynamics. Oursimulations with the dedicated hybrid approach (XTANT) indicate that the widelyused Fermi's golden rule can break down describing material excitation onfemtosecond time scales. In contrast, dynamical coupling proposed in this workyields a reasonably good agreement of simulation results with availableexperimental data.

Electron-ion coupling in semiconductors beyond Fermi's golden rule