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The Moir\'{e} structure of epitaxial graphene mono layer grown on6H-SiC(0001) has been investigated recently by grazing incidence fast atomdiffraction, and the results were compared with the calculation of thestructure \textit{ab initio} and exact diffraction codes. We review theseresults and present a complementary approach using the Hard Wall Model toextract information without any \textit{a priori}. Reversely, taking advantageof previous exact calculations we evaluate quantitatively the performance ofthis simplified approach by comparing predictions using the same potentialenergy surface.

Helium diffraction on SiC grown graphene, qualitative and quantitative description with the hard corrugated wall model