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In polar semiconductors and oxides, the long-range nature of theelectron-phonon (\textit{e}-ph) interaction is a bottleneck to compute chargetransport from first principles. Here, we develop an efficient ab initio schemeto compute and converge the \textit{e}-ph relaxation times (RTs) and electronmobility in polar materials. We apply our approach to GaAs, where using theBoltzmann equation with state-dependent RTs, we compute mobilities in excellentagreement with experiment at 250$-$500~K. The $e$-ph RTs and the phononcontributions to intravalley and intervalley $e$-ph scattering are alsoanalyzed. Our work enables efficient ab initio computations of transport andcarrier dynamics in polar materials.

Ab initio Electron Mobility and Polar Phonon Scattering in GaAs