English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dotdevice with two ferromagnetic sidegates (FSGs) in a split-gate geometry. Thewire segment can be electrically tuned to a single dot or to a double dotregime using the FSGs and a backgate. In both regimes we find a strong MR and asharp MR switching of up to 25\% at the field at which the magnetizations ofthe FSGs are inverted by the external field. The sign and amplitude of the MRand the MR switching can both be tuned electrically by the FSGs. In a doubledot regime close to pinch-off we find {\it two} sharp transitions in theconductance, reminiscent of tunneling MR (TMR) between two ferromagneticcontacts, with one transition near zero and one at the FSG switching fields.These surprisingly rich characteristics we explain in several simple resonanttunneling models. For example, the TMR-like MR can be understood as astray-field controlled transition between singlet and a triplet double dotstates. Such local magnetic fields are the key elements in various proposals toengineer novel states of matter and may be used for testing electron spin-basedBell inequalities.

Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates