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The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain inthe Si/SiGe quantum well system partially lifts the valley degeneracy, but thematerials factors that set the splitting of the two lowest lying valleys arestill under intense investigation. We propose a method for accuratelydetermining the valley splitting in Si/SiGe double quantum dots embedded into asuperconducting microwave resonator. We show that low lying valley states inthe double quantum dot energy level spectrum lead to readily observablefeatures in the cavity transmission. These features generate a "fingerprint" ofthe microscopic energy level structure of a semiconductor double quantum dot,providing useful information on valley splittings and intervalley couplingrates.

Dispersive readout of valley splittings in cavity-coupled silicon quantum dots