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We report magnetoresistance measurements of hydrogen-terminated(100)-oriented diamond surfaces where hole carriers are accumulated using anionic-liquid-gated field-effect-transistor technique. Unexpectedly, theobserved magnetoresistance is positive within the range of 2<T<10 K and -7<B<7T, in striking contrast to the negative magnetoresistance previously detectedfor similar devices with (111)-oriented diamond surfaces. Furthermore we find:1) magnetoresistance is orders of magnitude larger than that of the classicalorbital magnetoresistance; 2) magnetoresistance is nearly independent of thedirection of the applied magnetic field; 3) for the in-plane field, themagnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universalfunction of B/T. These results indicate that the spin degree of freedom of holecarriers plays an important role in the surface conductivity ofhydrogen-terminated (100) diamond.

Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond