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Quantum Hall effects offer a formidable playground for the investigation ofquantum transport phenomena. Edge modes can be detected, branched, and mixed bydesigning a suitable potential landscape in a two-dimensional conducting systemsubject to a strong magnetic field. In the present work, we demonstrate aburied split-gate architecture and use it to control electron conduction inlarge-scale single-crystal monolayer graphene grown by chemical vapordeposition. The control of the edge trajectories is demonstrated by theobservation of various fractional quantum resistances, as a result of acontrollable inter-edge scattering. Experimental data are successfully modeledboth numerically and within the Landauer-Buettiker formalism. Our architectureis particularly promising and unique in view of the investigation of quantumtransport via scanning probe microscopy, since graphene constitutes the topmostlayer of the device. For this reason, it can be approached and perturbed by ascanning probe down to the limit of mechanical contact.

Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts