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The excitonic spectra of single layer GeS and GeSe are predicted by ab initioGW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the bandstructures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSemonolayer. However, excitons are tightly bound, specially in GeS at the{\Gamma} point, where the quasi-particle interactions are so strong that theyshift the {\Gamma} exciton peak energy into the visible range and below theoff-{\Gamma} exciton peak. The lowest energy excitons in both materials areexcited by light along the zigzag direction and have exciton binding energiesof 1.05 eV and 0.4 eV, respectively, but despite the strong binding, thecalculated binding energies are in agreement with a Mott-Wannier model.

Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers