English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Hexagonally patterned two-dimensional $p$-type semiconductor systems arequantum simulators of graphene with strong and highly tunable spin-orbitinteractions. We show that application of purely in-plane magnetic fields, incombination with the crystallographic anisotropy present in low-symmetrysemiconductor interfaces, allows Chern insulating phases to emerge from anoriginally topologically insulating state after a quantum phase transition.These phases are characterized by pairs of co-propagating edge modes and Hallconductivities $\sigma_{xy} = +\frac{2 e^2}{h}, -\frac{2 e^2}{h}$ in theabsence of Landau levels or cyclotron motion. With current lithographictechnology, the Chern insulating transitions are predicted to occur in GaAsheterostructures at magnetic fields of $\sim 5\text{T}$.

Chern insulating state in laterally patterned semiconductor heterostructures