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Several prominent transport properties have been identified as key signaturesof topologicalmaterials. One is the resistivity plateau at low temperatures asobserved in several topological insulators (TIs), another is the negativemagnetoresistance (MR) when the applied magnetic field is parallel to thecurrent direction as observed in several topological semimetals (TSMs)including Dirac semimetals (DSMs) and Weyl semimetals (WSMs). Usually, thesetwo exotic phenomena emerge in distinct materials with or without time reversalsymmetry (TRS), respectively. Here we report the discovery of a new member inTSMs, TaSb2, which clearly exhibits both of these phenomena in a singlematerial. This compound crystallizes in a base-centered monoclinic,centrosymmetric structure, and is metallic with a low carrier density in thezero field. While applying magnetic field it exhibits insulating behaviorbefore appearance of a resistivity plateau below Tc =13 K. In the plateauregime, the ultrahigh carrier mobility and extreme magnetoresistance (XMR) forthe field perpendicular to the current are observed as in DSMs and WSMs, inaddition to a quantum oscillation behavior with non-trivial Berry phases. Incontrast to the most known DSMs and WSMs, the negative MR in TaSb2 does notsaturate up to 9 T, which, together with the almost linear Hall resistivity,manifests itself an electron-hole non-compensated TMS. These findings indicatethat the resistivity plateau could be a generic feature of topology-protectedmetallic states even in the absence of TRS and compatible with the negative MRdepending on the field direction. Our experiment extends a materials basisrepresented by TaSb2 as a new platform for future theoretical investigationsand device applications of topological materials.

Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2