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Two dimensional electron gases (2DEGs) at surfaces and interfaces ofsemiconductors are described straightforwardly with a 1D self-consistentPoisson-Schr\"{o}dinger scheme. However, their band energies have not beenmodeled correctly in this way. Using angle-resolved photoelectron spectroscopywe study the band structures of 2DEGs formed at sulfur-passivated surfaces ofInAs(001) as a model system. Electronic properties of these surfaces are tunedby changing the S coverage, while keeping a high-quality interface, free ofdefects and with a constant doping density. In contrast to earlier studies weshow that the Poisson-Schr\"{o}dinger scheme predicts the 2DEG bands energiescorrectly but it is indispensable to take into account the existence of thephysical surface. The surface substantially influences the band energies beyondsimple electrostatics, by setting nontrivial boundary conditions for 2DEGwavefunctions.

Effect of a skin-deep surface zone on formation of two-dimensional electron gas at a semiconductor surface