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We present the first-principles determination of electronic stopping powerfor protons and {\alpha} particles in a semiconductor material of greattechnological interest: silicon carbide. The calculations are based onnonequilibrium simulations of the electronic response to swift ions usingreal-time, time-dependent density functional theory (RT-TDDFT). We compare theresults from this first-principles approach to those of the widely used linearresponse formalism and determine the ion velocity regime within which linearresponse treatments are appropriate. We also use the nonequilibrium electrondensities in our simulations to quantitatively address the longstandingquestion of the velocity-dependent effective charge state of projectile ions ina material, due to its importance in linear response theory. We further examinethe validity of the recently proposed centroid path approximation for reducingthe computational cost of acquiring stopping power curves from RT-TDDFTsimulations.

Electronic stopping for protons and {\alpha} particles from first-principles electron dynamics: The case of silicon carbide