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Spintronics---the all-electrical control of the electron spin for quantum orclassical information storage and processing---is one of the most promisingapplications of the two-dimensional material graphene. Although pristinegraphene has negligible spin-orbit coupling (SOC), both theory and experimentsuggest that SOC in graphene can be substantially enhanced by extrinsic means,such as functionalization by adatom impurities. We present a theory oftransport in graphene that accounts for the full spin-coherent dynamics of thecarriers, including hitherto-neglected spin precession processes duringresonant scattering with dilute impurities. We identify a novel "anisotropicspin precession scattering" process, specific to two dimensions and extrinsicSOC, which contributes to a large current-induced spin polarization ingraphene. The theory also yields a comprehensive description of the spinrelaxation mechanisms in impurity-decorated graphene: the Elliot-Yafet andDyakonov-Perel relaxation rates are both present, and we find that the lattercan dominate for some choices of carrier density and impurity strength. Thisprovides theoretical foundations for designing future graphene-based integratedspintronic devices.

Direct coupling between charge current and spin polarization by extrinsic mechanisms in graphene